Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films

摘要

Structural and electronic properties of amorphous and single-phasepolycrystalline films of gamma- and kappa-In2Se3 have been measured. The stablegamma phase nucleates homogeneously in the film bulk and has a highresistivity, while the metastable kappa phase nucleates at the film surface andhas a moderate resistivity. The microstructures of hot-deposited andpost-annealed cold-deposited gamma films are quite different but the electronicproperties are similar. The increase in the resistivity of amorphous In2Se3films upon annealing is interpreted in terms of the replacement of In-In bondswith In-Se bonds during crystallization. Great care must be taken in thepreparation of In2Se3 films for electrical measurements as the presence ofexcess chalcogen or surface oxidation may greatly affect the film properties.